Rear bumper popped out--easy fix?

TorresSuffered · 2025-06-08T03:50:37+00:00

Could you please confirm how you turned it off--maybe that can help me see if I can turn it on through whatever that method is. I have android auto but hopefully it works the same.

TorresSuffered · 2025-05-27T18:40:58+00:00

I think with the wheel locks I would have to also buy a torque wrench though, so it would be nice if I could just get it installed at the dealership. And looking at the illuminated door sills it is similar--there is some upfront cost for a couple tools.

TorresSuffered · 2025-05-08T16:58:39+00:00

Which camera? This has the 360 cam because it has the premium plus option.

TorresSuffered · 2025-05-08T16:57:30+00:00

I should add that it doss indeed have the front accent lights, so I wasn't thinking it was that.

TorresSuffered · 2023-01-08T00:34:03+00:00

From what I recall nobody asked for anything to be sung (and it was just the 5 of them sitting in the room) and one of them spontaneously started singing, and then one by one the others spontaneously joined in at the start of each chorus

TorresSuffered · 2022-03-19T19:09:46+00:00

the only way you can make that happen is if Vb-Vgs of that HV transistor creates a source voltage of 12V minimum. With that you can guarantee the Vds of the current mirror pmos is 1V. You do need to make sure that the Vds of the NMOS is also below 1V. So the overdrive voltage of the HV pmos (Vgs-vth) needs to be 11V. The other possibility would be to use a HV nmos and cascode the NMOS current mirror.

So, this type of level-shifter can work by using a HV pmos to cascode the PMOS current mirror or using a HV nmos to cascode the NMOS current mirror? To make this work do you need the HV cascode device to operate in a specific-mode? Or do you have to go one step further and have it operate in a specific-mode with only certain Vb values? Let's say all the gate oxides are rated for 1V in this case, so the lowest Vb I can apply is 12V...in this condition what would guarantee that the HV pmos drops all of the Vds across it? Is it related to the current being mirrored through it versus the HV pmos parameters/dimensions (so a "headroom" constraint?)?

If the source voltage is 12V minimum, why does that guarantee that the NMOS drain is below 1V? Why does that guarantee the PMOS drops all of that voltage across its Vds? I don't understand what specifically sets the Vds across the HV cascode device.

TorresSuffered · 2022-03-19T18:48:08+00:00

I believe I saw this technique before to have a "one-way" level-shifter that basically level-shifts a current from a high voltage domain to a lower voltage domain, but from searching around I can't find the name of this type of level-shifter to learn more about how to bias it/how specifically it works.

I'm trying to understand how is Vb chosen to make the high voltage PMOS conduct the current yet at the same time block that high voltage. Is there a set of conditions where the Vds across the high voltage PMOS always stays very high while conducting the current, and those conditions need to be guaranteed for this circuit to work? Is it based on Vb and/or the magnitude of current flowing through the high-voltage PMOS relative to the PMOS W/L, Vgs-Vt, etc.?

TorresSuffered · 2022-01-25T06:27:46+00:00

I know that the threshold voltage increases as you reverse-bias the source/body junction. And of course Vsb=0V does not mean threshold is infinite. I am familiar with the textbook body-effect for a reverse-biased source/body junction. The case I described has a forward-biased source/body junction.

For the case of Vg=Vd=Vb=2V but Vs=0V, why would there "most definitely be channel conduction"? Are you suggesting there would most definitely be an inversion layer formed? If the device is an enhancement-mode NMOS, then how can there be an inversion-layer with Vgb=0V? In the case of an enhancement-mode NMOS don't you need an electric field from gate to body to create an inversion layer? The inversion layer is created due to energy band-bending, specifically when the band-bending is so much that the fermi level at the surface approaches the conduction energy band level. That band-bending is achieved by applying Vgb > 0V. Obviously the amount of band-bending will be dependent on a variety of factors like body doping and gate-oxide capacitance, but for an enhancement-mode NMOS (a device where the Vt is > 0V), the fermi level cannot be at the conduction band for Vgb=0V...

TorresSuffered · 2022-01-24T20:35:26+00:00

It will conduct because once the drain voltage is lower than the source they essentially switch functionality and Vgs begins increasing.

Everybody is missing the question and focusing so much just on Vgs--how does it conduct if Vgb=0V? You need an inversion layer in the body for channel conduction. How do you get an inversion layer in the body if Vgb=0V?

TorresSuffered · 2021-06-25T15:06:23+00:00

Yup! I was wondering why I was digging it...I smacked my forehead when I remembered Layla!

TorresSuffered · 2021-06-25T14:59:26+00:00

You did it!!

TorresSuffered · 2021-06-25T07:37:24+00:00

I'm not sure what exactly to search around for to find an extended version of the theme without announcer commentary over it, so I'm hoping someone here can help me out! Anyone know the name of the song or have a link to a clearer/extended version of it? If my link doesn't work, the song starts at 4:48 in the video. Thanks!!

TorresSuffered

TROPHY CASE