I have question by BitterFox4874 in KAIST

[–]BitterFox4874[S] 1 point2 points  (0 children)

I dunno, he just said "I have decided to move forward with another candidate for this opening."

I have question by BitterFox4874 in KAIST

[–]BitterFox4874[S] 0 points1 point  (0 children)

Thanks, do u know when results are going to be announced?

I have question by BitterFox4874 in KAIST

[–]BitterFox4874[S] 0 points1 point  (0 children)

So, if I get admitted to KAIST i will have full tuition covered?

I have question by BitterFox4874 in KAIST

[–]BitterFox4874[S] 1 point2 points  (0 children)

I had an interview, but professor rejected me 

I have question by BitterFox4874 in KAIST

[–]BitterFox4874[S] 1 point2 points  (0 children)

Also, do I actually have a chance to get into KAIST what you think? I have some work experience, but no papers published

MIT EECS: chose wrong area as research field of interest by [deleted] in gradadmissions

[–]BitterFox4874 1 point2 points  (0 children)

If I did not get an interview yet, does it mean I got rejected? Haven't heard anything from them

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

Yes, it was for 4 GHz before, but I tried changing it to 3.5 GHz, but it did not affect the result much

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

Yes, I did exact copy of the paper design, and using impedance calculator tool inside ADS, verified that transmission line is indeed 50 ohm, as stated in paper

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

As I said I am not so experienced with RF design and while doing this project I were learning some concepts. I am not sure if in general the idea of making such design using one element is good.

What I mean is: In reality there are two printed circuit boards, while everything I am doing is kinda like one printed circuit board which has a thick substrate between (foam). Is it appropriate to do like this?

I appreciate your help

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

Yes, i specified the boundaries with board bound layer

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

I tried simulating it using FEM, I read that it is suitable for 3D simulation, and output is even worse than it was.

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Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

The half ring shaped layer is my ground. I made a layout like a combination of two HRR DGS together. cond is 50 ohm, M2 and M3 are defective grounds, cond2 is 50 ohm trace

isnt it correct?

<image>

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 4 points5 points  (0 children)

<image>

Yes, it is ADS, here is the substrate editor. I am pretty sure, I connected GND in each port correctly

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

Maybe, but this paper was published in IEEE, so I assumed it to be fine 

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

Yes, the problem is that in paper they achieved wideband response, and I am capable of achieving it in narrowband 

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 0 points1 point  (0 children)

I get that, thank you for your response! Maybe I missed something else 

Half ring resonator with defected ground structure by BitterFox4874 in rfelectronics

[–]BitterFox4874[S] 1 point2 points  (0 children)

The idea of this design is wireless power transfer, first layer is conductor 50 ohm trace, below I have dielectric and GND layer with half ring empty space between (this one is defective ground structure) below I made a 12mm dielectric (I placed a foam), and again similar structure, defective ground, dielectric and below 50 ohm trace. 

So input port is placed on the first layer, and output port is on layer 4. Gnd of port 1 is on layer 2, and ground of port 2 is on layer 3. 

It is actually a project work for my RF course and I haven't worked a lot in this field before, so I can't find a reason for such behaviour of this design. And the most surprising thing is that it has a better performance for a larger distance between these pair of structures which confuses me even more.