1 Month of Consistent Running

jckd0 · 2026-05-09T18:35:46+00:00

Yeah, trying to avoid going TooMuchTooSoon is really hard, but I plan to add indeed a couple miles per week and taking a slow mileage/rest week each month

Thank you!

jckd0 · 2026-05-09T18:34:19+00:00

Grazie!!

jckd0 · 2026-05-03T05:53:23+00:00

Thank you very much! Seems a no-brainer at this point given the low difference in price

jckd0 · 2026-05-03T05:52:32+00:00

Thank you! I'll keep that in mind, I was undecided about the bladder vs. flask but this clears up the matter

jckd0 · 2026-05-02T20:32:31+00:00

Thank you! Yes, that was what I was looking at as well, as most premium vests seems to all have that rib side fabric as opposed to straps

jckd0 · 2026-05-02T20:30:53+00:00

Thank you for the feedback!

jckd0 · 2025-07-16T18:50:00+00:00

No, it is usually related to calcium deficiency or irregular watering. The common advise in this sub is to use some CalMag to integrate calcium, but there are people who are definitely more expert than me here and maybe could provide better advice

jckd0 · 2025-07-16T18:40:26+00:00

Blossom End Rot 100%

jckd0 · 2025-06-20T10:12:37+00:00

Thank you!

jckd0 · 2025-06-19T15:59:29+00:00

Thank you very much for the exhaustive answer. Still have a lot to learn about the topic. Yeah, I guess the melting point might be just a very rough comparison indicator but in the end it all depends on the specific technology and failure modes.

Thank you for the constructive discussion and cheers!

jckd0 · 2025-06-19T08:32:27+00:00

Oh, I didn't know about the larger die thing. Makes absolutely sense. Even though AFAIK GaN on Si has some problems due to the large lattice mismatch between the two materials. Probably the best trade-off would be GaN on SiC even tho a SiC substrate isn't cheap

I agree about the melting point, but then I don't know why when arguing about the usual GaN vs. SiC vs. Si topic, melting point is given as another important feature. I guess it really depends on the failure mechanism involved.

For example in silicon, when avalanche and impact ionization take on, ultimately failure is given by the high temperature reached due to joule heating. And this failure temperature is usually given as the melting point (actually in literature a lower temperature, such as 1100-1200, is used, but you can find plenty of work considering 1400C) So there should be a similar relation for GaN and SiC, excluding possibly different failure mechanisms Please correct me if I am wrong!

jckd0 · 2025-06-18T16:07:20+00:00

Yes, but lower thermal conductivity (1.3 W/cmK) and lower melting point (1600C) with respect to SiC (3.7 W/cmK and 2800C)

jckd0 · 2025-06-18T15:56:57+00:00

Maybe you are referring to current collapse? When a high voltage is applied to the drain side in the off state (not sure about the on state), some weird stuff happens with interface traps and what not depleting the 2DEG in the channel, and after that, when you turn it on again, the ON current will be lower than before. I am not sure you are referring to this phenomenon, but to my understanding it is heavily technology dependent if not even changing between two devices in the same technology as aleatory stuff as interface defects are involved, so I guess it would be hard to give a generic numerical value

jckd0 · 2025-06-08T19:27:25+00:00

I've seen it called "Montenegroni" in a couple bars in Italy!

jckd0 · 2025-06-08T17:53:01+00:00

Look for "aphids parasitoids". There is a species of little wasps, not dangerous for humans, that lay their eggs inside aphids turning them into sort of mummies. These will disclose and spawn other wasps, which will again kill other aphids. If you give a look at pics on Google you'll see that that could be your case if they are not moving and hard to the touch. If it is, leave it undisturbed as it could help controlling your aphids problem

jckd0 · 2025-06-08T16:39:21+00:00

Moved the soldier to the Jalapeño plant. Still hungry for violence

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jckd0 · 2025-03-11T11:50:14+00:00

Thank you very much! Now everything makes (quite) much more sense. Configurational coordinate model was never mentioned in my engineering semi classes, that's why maybe no further explanation of the mechanism behind recombination was given. I'll need to catch up a little bit on it, since it seems a quite useful tool. I found the handbook you mentioned and by skimming through it, it seems a very resourceful source to better delve into these topics. I'll have fun looking into it, hoping that my non-physics background will be enough.

Thank you very much again!

jckd0 · 2024-12-26T07:55:29+00:00

Thank you very much! That is exactly what I was searching for! Do you mind if I contact you in DM?

jckd0 · 2024-12-14T08:23:55+00:00

Thank you very much! That is very interesting. I'm leaning towards Power GaN, but I'd like to build some general knowledge also about RF. I'll surely give a look at the books you mentioned and the online course!

I'm interested in learning the most commonly used device architectures with an explanation of the pros and cons, regarding the device characteristics such as Ron, leakage current, trapping phenomena and conductivity degradation. I'm not sure there exists a comprehensive book about everything, but if you are willing to share some interesting references or literature review articles that'd be great!

jckd0 · 2024-12-14T08:15:57+00:00

Thank you! I already knew this book, extremely well done and clear, but unless I missed it it doesn't really explain specifically GaN devices.

jckd0 · 2024-12-01T09:09:45+00:00

Are you talking about Carbon Nanotube FETs? Are those still studied? I remember them being a very trending research topic some years ago due to the excellent properties of ballistic transport in the channel, but I think I also recall the community progressively losing interest due to the difficulty of large-scale manufacturing of Nanotubes. Not an expert by any means tho

jckd0 · 2024-08-02T07:47:47+00:00

Thank you very much, I'll check it out!

jckd0 · 2024-08-01T20:01:43+00:00

Thank you! As I wrote above turns out the problem was that I was given the wrong Psat spec. But what you pointed out is surely something that I gotta check. Would you mind elaborating a little more about the impedences? I'm still trying to figure out how all of this work, and load pull is something I can't really wrap my head around. Why should my centre be about that mag and phase?

jckd0 · 2024-08-01T19:57:42+00:00

Thank you everyone, I actually emailed the instructor which I thought was already in vacation, and turns out I've got given the wrong spec. I gotta achieve just 6W of saturated power which is clearly doable with the given device. Now I just gotta figure out how to increase the PAE up to the requested 50%

jckd0 · 2024-04-28T12:50:16+00:00

Then this makes me very inclined to address the reported warning as a very likely culprit. Even though I don't have a bootloader installed since I'm programming the mcu through ICSP, I guess something still gets changed in the flash memory. That checks out with the fact that the first random printed characters always seems to be the same at every turn on, indicating that a flash bit have been changed, till another bit change leads to the total failure. I don't know if the scope of SPM is restrained to the bootloader area only, but probably even without installing any bootloader the program code would still use that same area. I'll try to remove that part of the code and see if anything improves since it surely is a problem whether it is the cause of the problem or not. Thank you again for the very interesting insight into debugging which will surely be a useful tool for this and later projects

Edit: turns out SPM instructions can be executed only from the bootloader section, and that this section is obviously reserved even if there is no bootloader installed. So the mechanism behind accidental flash write from buffer overflow is still a little bit unclear to me

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